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IRFP31N50L 07/18/03 smps mosfet hexfet power mosfet www.irf.com 1 features and benefits ?

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v dss r ds(on) typ. trr typ. i d 500v 0.15 ? 170ns 31a ab so l ute m ax i mum r at i ngs parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 31 i d @ t c = 100c continuous drain current, v gs @ 10v 20 a i dm pulsed drain current 124 p d @t c = 25c power dissipation 460 w linear derating factor 3.7 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 19 v/ns t j operating junction and -55 to + 150 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case ) mounting torque, 6-32 or m3 screw di o d e ch aracter i st i cs s y mbol parameter min. t y p. max. unit s conditions i s continuous source current ??? ??? 31 mosfet symbol (body diode) a showing the i sm pulsed source current ??? ??? 124 integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 31a, v gs = 0v t rr reverse recovery time ??? 170 250 ns t j = 25c, i f = 31a ??? 220 330 t j = 125c, di/dt = 100a/s q rr reverse recovery charge ??? 570 860 nc t j = 25c, i s = 31a, v gs = 0v ??? 1.2 1.8 c t j = 125c, di/dt = 100a/s i rrm reverse recovery current ??? 7.9 12 a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) 10lb in (1.1n m) to-247ac pd - 94081a
IRFP31N50L 2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) starting t j = 25c, l = 1mh, r g = 25 ? , i as = 31a (see figure 12). i sd = 31a, di/dt 422a/s, v dd v (br)dss , t j 150c. pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff.(er) is a fixed capacitance that stores the same energy as c oss while v ds is rising from 0 to 80% v dss . static @ t j = 25c (unless otherwise specified) s y mbol parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e 500 ?? ? ?? ? v ? v (br)dss / ? t j breakdown volta g e temp. coefficient ?? ? 0.28 ?? ? v/c r ds(on) static drain-to-source on-resistance ?? ? 0.15 0.18 ? v gs(th) gate threshold volta g e3.0?? ? 5.0 v i dss drain-to-source leaka g e current ?? ? ?? ? 50 a ?? ? ?? ? 2.0 ma i gss gate-to-source forward leaka g e?? ? ?? ? 100 na gate-to-source reverse leaka g e?? ? ?? ? -100 r g internal gate resistance ?? ? 1.1 ?? ? ? dynamic @ t j = 25c (unless otherwise specified) s y mbol parameter min. t y p. max. units g fs forward transconductance 15 ?? ? ?? ? s q g total gate char g e?? ? ?? ? 210 q gs gate-to-source char g e?? ? ?? ? 58 nc q gd gate-to-drain ("miller") char g e?? ? ?? ? 100 t d(on) turn-on delay time ?? ? 28 ?? ? t r rise time ?? ? 115 ?? ? ns t d(off) turn-off delay time ?? ? 54 ?? ? t f fall time ?? ? 53 ?? ? c iss input capacitance ?? ? 5000 ?? ? c oss output capacitance ?? ? 553 ?? ? c rss reverse transfer capacitance ?? ? 59 ?? ? c oss output capacitance ?? ? 6630 ?? ? pf v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ?? ? 155 ?? ? v gs = 0v, v ds = 400v, ? = 1.0mhz c oss eff. effective output capacitance ?? ? 276 ?? ? c oss eff. (er) effective output capacitance ?? ? 200 ?? ? (energy related) avalanche characteristics s y mbol parameter typ. units e as si n gl e p u l se a va l anc h e e ner g y ?? ? mj i ar a va l anc h e c urren t ?? ? a e ar r epe titi ve a va l anc h e e ner g y ?? ? mj thermal resistance s y mbol parameter t y p. units r jc junction-to-case ?? ? r cs case-to-sink, flat, greased surface 0.24 c/w r ja junction-to-ambient ?? ? 40 max. 0.26 ??? v ds = 25v ? = 1.0mhz, see fig. 5 31 46 max. 460 v gs = 0v,v ds = 0v to 400v i d = 31a r g = 4.3 ? v gs = 10v, see fig. 14a & 14b v gs = 0v i d = 31a v ds = 400v v gs = 10v, see fig. 7 & 15 v dd = 250v v gs = 30v f = 1mhz, open drain conditions v ds = 50v, i d = 19a v gs = -30v v ds = v gs , i d = 250a v ds = 500v, v gs = 0v v ds = 400v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 19a
IRFP31N50L www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 1000 4 5 6 7 8 9 10 11 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 31a
IRFP31N50L 4 www.irf.com fig 5. typical capacitance vs. drain-to-source voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 1000000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd fig 8. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j fig 7. typical gate charge vs. gate-to-source voltage 0 40 80 120 160 0 4 8 12 16 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 31a v = 100v ds v = 250v ds v = 400v ds fig 6. typ. output capacitance stored energy vs. v ds 0 100 200 300 400 500 600 v ds, drain-to-source voltage (v) 0 5 10 15 20 25 30 e n e r g y ( j )
IRFP31N50L www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 5 10 15 20 25 30 35 t , case temperature ( c) i , drain current (a) c d
IRFP31N50L 6 www.irf.com fig 14a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 15a. gate charge test circuit fig 15b. basic gate charge waveform fig 14b. unclamped inductive waveforms t p v (br)dss i as fig 13. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 14a 20a 31a fig 12. maximum safe operating area 1 10 100 1000 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
IRFP31N50L www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 16. for n-channel hexfet power mosfets

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IRFP31N50L 8 www.irf.com

lead assignments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d mm b - a - 15.90 (.626) 15.30 (.602) - b - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain notes : t his part marking information applies to devices produced after 02/26/2001 example: as s e mb le d on ww 35, 2000 lot code 5657 wit h as s e mb l y this is an irfpe30 in the assembly line "h" 035h logo int e rnat ional rectifier irf pe30 lot code as s e mb l y 56 57 part number dat e code year 0 = 2000 week 35 line h lot code ww = we e k yy = year notes : this part markin g information applies to devices produced before 02/26/2001 or for example: this is an irfpe30 with assembly lot code 3a1q assembly logo rect if ier i nt e r nat i onal 3a1q irfpe30 part number (yyww) dat e code 9302 parts manufactured in gb . data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/03 to-247ac package is not recommended for surface mount application.

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